693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dawson, Md
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (39/39 displayed)
- 2020Gallium nitride micro-light-emitting diode structured light sources for multi-modal optical wireless communications systemscitations
- 2020Suspension and transfer printing of ZnCdMgSe membranes from an InP substrate
- 2020Gigabit per second visible light communication based on AlGaInP red micro-LED micro-transfer printed onto diamond and glasscitations
- 2020Automated nanoscale absolute accuracy alignment system for transfer printingcitations
- 2019Amplifying organic semiconductor waveguide based nanocrystal sensor
- 2019Hyperspectral imaging under low illumination with a single photon cameracitations
- 2019Gallium nitride micro-LED drive circuits for visible light communications
- 2017InGaN µLEDs integrated onto colloidal quantum dot functionalised ultra-thin glasscitations
- 2017Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodescitations
- 2017Gb/s visible light communications with colloidal quantum dot color converterscitations
- 2017InGaN µLEDs integrated onto colloidal quantum dot functionalized ultra-thin glass.
- 2013Highly-photostable and mechanically flexible all-organic semiconductor laserscitations
- 2012Colloidal quantum dot nanocomposites for visible wavelength conversion of modulated optical signalscitations
- 2010Amplified spontaneous emission in free-standing membranes incorporating star-shaped monodisperse π-conjugated truxene oligomerscitations
- 2010Tunable laser operation of a Tm3+-doped tellurite glass laser near 2 μm pumped by a 1211 nm semiconductor disk lasercitations
- 2009Free-standing light-emitting organic nanocomposite membranes
- 2009White light emission via cascade Förster energy transfer in (Ga, In)N quantum well/polymer blend hybrid structurescitations
- 2009Star-shaped oligofluorene nanostructured blend materialscitations
- 2009GaInNAs semiconductor disk lasers as pump sources for Tm3+ (,Ho3+ )-doped glass, crystal and fibre laserscitations
- 2009Hybrid GaN/organic microstructured light-emitting devices via ink-jet printingcitations
- 2008Integration by self-aligned writing of nanocrystal/epoxy composites on InGaN micropixelated light-emitting diodescitations
- 2008Light emitting polymer blends and diffractive optical elements in high-speed direct laser writing of microstructurescitations
- 2008Individually-addressable flip-chip AllnGaN micropixelated light emitting diode arrays with high continuous and nanosecond output powercitations
- 2007Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector
- 2006Hybrid inorganic/organic micro-structured light-emitting diodes produced by self-aligned direct writing
- 2006Microfabrication in free-standing gallium nitride using UV laser micromachiningcitations
- 2006Hybrid inorganic/organic semiconductor heterostructures with efficient non-radiative energy transfercitations
- 2006Wavelength-tunable and white light emission from polymer-converted micropixellated InGaN ultraviolet light-emitting diodescitations
- 2005Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applicationscitations
- 2004Effects of rapid thermal annealing on the optical properties of low-loss 1.3um GaInNAs/GaAs saturable bragg reflectorscitations
- 2004Micromachining and dicing of sapphire, gallium nitride and micro LED devices with UV copper vapour lasercitations
- 2003Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixingcitations
- 20030.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor lasercitations
- 2003Fabrication of matrix-addressable InGaN-based microdisplays of high array densitycitations
- 2003Characterization of selective quantum well intermixing in 1.3um GaInNAs/GaAs structurescitations
- 2003Quantum well intermixing in GaInNAs/GaAs structurescitations
- 2002GaN microcavities formed by laser lift-off and plasma etchingcitations
- 2001Femtosecond laser machining of gallium nitridecitations
- 2001InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching
Places of action
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article
0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser
Abstract
We report the power scaling of a diode-pumped GaAs-based 850-nm vertical external-cavity surface-emitting laser, by use of an intracavity silicon carbide (SiC) heatspreader optically contacted to the semiconductor surface. To our knowledge, this is the first demonstration of bonding of SiC to a III-V semiconductor structure using the technique of liquid capillarity. High output power of >0.5 W in a circularly symmetric, TEM/sub 00/ output beam has been achieved with a spectral shift of only 0.6 nm/W of pump power. No thermal rollover was evident up to the highest pump power available, implying significant further output-power scaling potential using this approach.