| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lind, Erik
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2023Low temperature atomic hydrogen annealing of InGaAs MOSFETscitations
- 2023Time evolution of surface species during the ALD of high-k oxide on InAscitations
- 2023Time evolution of surface species during the ALD of high-k oxide on InAscitations
- 2023Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substratescitations
- 2023Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungstencitations
- 2022Oxygen relocation during HfO2 ALD on InAscitations
- 2022Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance.
- 2022Template-Assisted Selective Epitaxy of InAs on W
- 2021Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performancecitations
- 2020Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studiescitations
- 2020Atomic Layer Deposition of Hafnium Oxide on InAscitations
- 2016ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatmentcitations
- 2016ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatmentcitations
- 2014InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.citations
- 2014Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistorscitations
- 2013Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
- 2013Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistorscitations
- 2012Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substratescitations
- 2012High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFETcitations
- 2011High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2011Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopycitations
- 2004Resonant tunneling permeable base transistor based pulsed oscillator
- 2004Tunneling Based Electronic Devices
Places of action
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article
High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
Abstract
We have developed a self-aligned L-g = 55 nm In-0.53 Ga-0.47 As MOSFET incorporating metal-organic chemical vapor deposition regrown n(++) In0.6Ga0.4As source and drain regions, which enables a record low on-resistance of 199 Omega mu m. The regrowth process includes an InP support layer, which is later removed selectively to the n(++) contact layer. This process forms a high-frequency compatible device using a low-complexity fabrication scheme. We report on high-frequency measurements showing f(max) of 292 GHz and f(t) of 244 GHz. These results are accompanied by modeling of the device, which accounts for the frequency response of gate oxide border traps and impact ionization phenomenon found in narrow band gap FETs. The device also shows a high drive current of 2.0 mA/mu m and a high extrinsic transconductance of 1.9 mS/mu m. These excellent properties are attributed to the use of a gate-last process, which does not include high temperature or dry-etch processes.