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Isoird, Karine
French National Centre for Scientific Research
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Publications (8/8 displayed)
- 2023Vertical pin diodes on large freestanding (100) diamond film
- 2021Ohmic contacts by phosphorous ion implantation on (111) N-type CVD Diamond
- 2012"Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process"
- 2012An assessment of contact metallization for high power and high temperature diamond Schottky devicescitations
- 2009A New Junction Termination Using a Deep Trench Filled With BenzoCycloButenecitations
- 2003Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment
- 2002A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effectscitations
- 2001Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing
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article
A New Junction Termination Using a Deep Trench Filled With BenzoCycloButene
Abstract
A new junction termination for high-voltage devices using a deep trench filled with dielectric, which dramatically decreases the junction-termination area, is proposed and fabricated. The termination breakdown voltage dependence on the dielectric critical electric field and its permittivity is theoretically studied. Finally, the proposed junction termination is experimentally validated using BenzoCycloButene (BCB) as dielectric material. Experimental results show that the proposed termination sustains more than 1200 V with a 70 µm width and 100 µm depth trench filled by BCB.