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Cheng, I. Chun
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article
High mobility nanocrystalline silicon transistors on clear plastic substrates
Abstract
<p>We demonstrate nanocrystalline silicon (nc-Si) top-gate thin-film transistors (TFTs) on optically clear, flexible plastic foil substrates. The silicon layers were deposited by plasma-enhanced chemical vapor deposition at a substrate temperature of 150°C. The n-channel nc-Si TFTs have saturation electron mobilities of 18 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup> and transconductances of 0.22 μSμ<sup>-1</sup>. With a channel width to length ratio of 2, these TFTs deliver up to 0.1 mA to bottom emitting electrophosphorescent organic light-emitting devices (OLEDs) which were fabricated on a separate glass substrate. These results suggest that high-current, small-area OLED driver TFTs can be made by a low-temperature process, compatible with flexible clear plastic substrates.</p>