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Sears, K.
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Publications (7/7 displayed)
- 2010Electrical properties of Si-XII and Si-III formed by nanoindentationcitations
- 2007Modeling and characterization of InAsGaAs quantum dot lasers grown using metal organic chemical vapor depositioncitations
- 2006A transmission electron microscopy study of defects formed through the capping layer of self-assembled InAs/GaAs quantum dot samplescitations
- 2006Quantum Dots and Nanowires Grown by Metal-Organic Chemical Vapor Deposition for Optoelectronic Device Applicationscitations
- 2006The role of arsine in the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor depositioncitations
- 2005InAs quantum dots grown on InGaAs buffer layers by metal-organic chemical vapor depositioncitations
- 2005In0.5 Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor depositioncitations
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article
Quantum Dots and Nanowires Grown by Metal-Organic Chemical Vapor Deposition for Optoelectronic Device Applications
Abstract
<p>This paper discusses the growth of In(Ga)As quan tum dots (QDs) and nanowires by metal-organic chemical vapor deposition and their application to optoelectronic devices. The performance characteristics of QD lasers and QD photodetectors as well as the selective area growth of QDs for integrated devices are reported.</p>