| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Shepherd, David P.
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2018Yb-doped mixed sesquioxide thin films grown by pulsed laser depositioncitations
- 2018Towards high-power on-chip GHz frequency combs
- 2017Tailoring the refractive index of films during pulsed laser deposition growth
- 2017Pulsed laser deposition of garnets at a growth rate of 20-microns per hour
- 2016Laser performance of Yb-doped-garnet thin films grown by pulsed laser deposition
- 2016PLD growth of complex waveguide structures for applications in thin-film lasers: a 25 year retrospective
- 2016Engineered crystal layers grown by pulsed laser deposition: making bespoke planar gain-media devices
- 2016Pulsed laser deposited crystalline optical waveguides for thin-film lasing devices
- 2015Graphene Q-switched mode-locked and Q-switched ion-exchanged waveguide laserscitations
- 2015Pulsed laser-assisted fabrication of laser gain media
- 2015Towards fabrication of 10 W class planar waveguide lasers: analysis of crystalline sesquioxide layers fabricated via pulsed laser deposition
- 2014Near-infrared, mode-locked waveguide lasers with multi-GHz repetition rates
- 2014Pulsed laser deposition of thin films for optical and lasing waveguides (including tricks, tips and techniques to maximize the chances of growing what you actually want)
- 2014Graphene q-switched Yb: phosphate glass channel waveguide laser
- 2012Passively mode-locked diode-pumped monolithic channel waveguide laser with a repetition rate of 4.9 GHz
- 2008Current state-of-the-art of pulsed laser deposition of optical waveguide structures: existing capabilities and future trendscitations
- 2006Optical waveguide growth and applications
- 2004Laser operation of a low loss (0.1dB/cm) Nd:Gd3Ga5O12 thick (40 micron) planar waveguide grown by pulsed laser depositioncitations
- 2004Channel waveguide lasers in a lead silicate glass fashioned using the extrusion techniquecitations
- 2003Gain measurements at 2.8µm and fluorescence spectroscopy in Er:LaF3 waveguides fabricated by molecular beam epitaxy
- 2003Three-dimensional structuring of sapphire by sequential He+ ion-beam implantation and wet chemical etchingcitations
- 2002Laser-assisted microstructuring for Ti:sapphire channel-waveguide fabrication
- 2002Synchronously pumped optical parametric oscillator driven by a femtosecond mode-locked fibre lasercitations
- 2002Laser performance and spectroscopic analysis of optically written channel waveguides in neodymium-doped gallium lanthanum sulphide glasscitations
Places of action
| Organizations | Location | People |
|---|
article
Laser performance and spectroscopic analysis of optically written channel waveguides in neodymium-doped gallium lanthanum sulphide glass
Abstract
We present a spectroscopic analysis and laser characterization of optically written waveguides in neodymium-doped gallium lanthanum sulphide (Nd<sup>3+</sup>-Ga:La:S) chalcogenide glass. Uniform channel waveguides were fabricated in Nd<sup>3+</sup>-Ga:La:S by exposure to radiation from a focused uv-laser beam (λ = 244nm), producing a refractive index change Δ.n ~ +10<sup>-3</sup>. <br/><br/>The observed laser performance and fluorescence decay were in good agreement with values calculated from a spectroscopic analysis of 85µs for the <sup>4</sup>F<sub>3/2</sub> lifetime and 5.9 x 10<sup>-20</sup>cm<sup>2</sup> for the emission cross-section at 1075nm. Low threshold laser operation with emission at 1075nm and a slope efficiency of 17% is demonstrated. The active device is spatially single-mode and exhibits up to 8.6mW output power and propagation losses of <0.5 dB cm<sup>-1</sup>. Waveguide fabrication, photoinduced effects and optical characterization in terms of spectroscopy, laser performance and device attenuation are discussed.