| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pasanen, Toni P.
Helsinki Institute of Physics
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2023Surface passivation of Germanium with ALD Al2O3: Impact of Composition and Crystallinity of GeOx Interlayercitations
- 2023Excellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiodecitations
- 2023Comparison of SiNx-based Surface Passivation Between Germanium and Siliconcitations
- 2023Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germaniumcitations
- 2023Quantifying the Impact of Al Deposition Method on Underlying Al2O3/Si Interface Qualitycitations
- 2022Perspectives on Black Silicon in Semiconductor Manufacturing: Experimental Comparison of Plasma Etching, MACE and Fs-Laser Etchingcitations
- 2022Millisecond-Level Minority Carrier Lifetime in Femtosecond Laser-Textured Black Siliconcitations
- 2022(oral talk) Compatibility of Al-neal in processing of Si devices with Al2O3 layer
- 2022Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxidecitations
- 2021Efficient photon capture on germanium surfaces using industrially feasible nanostructure formationcitations
- 2021Al-neal Degrades Al2O3 Passivation of Silicon Surfacecitations
- 2020Modeling Field-effect in Black Silicon and its Impact on Device Performancecitations
- 2020Passivation of Detector-Grade Float Zone Silicon with Atomic Layer Deposited Aluminum Oxidecitations
- 2020Impact of doping and silicon substrate resistivity on the blistering of atomic-layer-deposited aluminium oxidecitations
- 2019Effect of MACE Parameters on Electrical and Optical Properties of ALD Passivated Black Siliconcitations
- 2019Compatibility of 3-D Printed Devices in Cleanroom Environments for Semiconductor Processingcitations
- 2019Compatibility of 3-D Printed Devices in Cleanroom Environments for Semiconductor Processingcitations
- 2019Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxidecitations
- 2018Economic Advantages of Dry-Etched Black Silicon in Passivated Emitter Rear Cell (PERC) Photovoltaic Manufacturingcitations
- 2018Economic Advantages of Dry-Etched Black Silicon in Passivated Emitter Rear Cell (PERC) Photovoltaic Manufacturingcitations
- 2017Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stackscitations
Places of action
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article
Excellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiode
Abstract
Metal-assisted chemical etched (MACE; also known as MacEtch or MCCE) nanostructures are utilized widely in the solar cell industry due to their excellent optical properties combined with a simple and cost-efficient fabrication process. The photodetection community, on the other hand, has not shown much interest toward MACE due to its drawbacks, including insufficient surface passivation, increased junction recombination, and possible metal contamination, which are especially detrimental to p-n photodiodes. Here, we aim to change this by demonstrating how to fabricate high-performance MACE p-n photodiodes with above 90% external quantum efficiency (EQE) without external bias voltage at 200-1000 nm and dark current less than 3 nA/cm2 at -5 V using industrially applicable methods. The key is to utilize an induced junction created by an atomic layer deposited (ALD) highly charged Al2O3 thin film that simultaneously provides efficient field-effect passivation and full conformality over the MACE nanostructures. Achieving close to ideal performance demonstrates the vast potential of MACE nanostructures in the fabrication of high-performance low-cost p-n photodiodes. ; Peer reviewed