| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Radfar, Behrad
Aalto University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024(invited talk) Sulfur-hyperdoped silicon by ultrashort laser processing
- 2024Development of a Selective Wet-Chemical Etchant for Precise 3D Sculpting of Silicon Enabled by Infrared Non-Linear Laser Modificationcitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Bridging the gap between surface physics and photonicscitations
- 2023(oral talk) Effective carrier lifetime in ultrashort pulse laser hyperdoped silicon: dopant concentration dependence and practical upper limits
- 2023Excellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiodecitations
- 2022Perspectives on Black Silicon in Semiconductor Manufacturing: Experimental Comparison of Plasma Etching, MACE and Fs-Laser Etchingcitations
- 2022Millisecond-Level Minority Carrier Lifetime in Femtosecond Laser-Textured Black Siliconcitations
Places of action
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article
Excellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiode
Abstract
Metal-assisted chemical etched (MACE; also known as MacEtch or MCCE) nanostructures are utilized widely in the solar cell industry due to their excellent optical properties combined with a simple and cost-efficient fabrication process. The photodetection community, on the other hand, has not shown much interest toward MACE due to its drawbacks, including insufficient surface passivation, increased junction recombination, and possible metal contamination, which are especially detrimental to p-n photodiodes. Here, we aim to change this by demonstrating how to fabricate high-performance MACE p-n photodiodes with above 90% external quantum efficiency (EQE) without external bias voltage at 200-1000 nm and dark current less than 3 nA/cm2 at -5 V using industrially applicable methods. The key is to utilize an induced junction created by an atomic layer deposited (ALD) highly charged Al2O3 thin film that simultaneously provides efficient field-effect passivation and full conformality over the MACE nanostructures. Achieving close to ideal performance demonstrates the vast potential of MACE nanostructures in the fabrication of high-performance low-cost p-n photodiodes. ; Peer reviewed