Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Delft University of Technology

in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (1/1 displayed)

  • 2020Toward a Self-Sensing Piezoresistive Pressure Sensor for all-SiC Monolithic Integration22citations

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Zeijl, H. W. Van
1 / 1 shared
Morana, Bruno
1 / 2 shared
Zhang, Guoqi
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Vollebregt, Sten
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2020

Co-Authors (by relevance)

  • Zeijl, H. W. Van
  • Morana, Bruno
  • Zhang, Guoqi
  • Vollebregt, Sten
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article

Toward a Self-Sensing Piezoresistive Pressure Sensor for all-SiC Monolithic Integration

  • Zeijl, H. W. Van
  • Morana, Bruno
  • Middelburg, Luke
  • Zhang, Guoqi
  • Vollebregt, Sten
Abstract

<p>This work focusses on the design and fabrication of surface micromachined pressure sensors, designed in a modular way for the integration with analog front-end read-out electronics. Polycrystalline 3C silicon carbide (SiC) was used to fabricate free-standing high topography cavities exploiting surface micromaching. The poly-SiC was in-situ doped and the membrane itself is used as piezoresistive element, thereby forming a so-called self-sensing membrane, easing fabrication. After sacrificial release, the cavity is sealed by conformal deposition of poly-SiC whereby the reference pressure of the absolute pressure sensor is determined. Aluminum and titanium metallizations were used and ohmic contacts were confirmed by wafer-scale measurements. Measurements were carried out on different devices ranging from 100 kPa down to 10 Pa at room temperature. The Wheatstone bridge yields a logarithmic response of 1.1 mVbar-1 V-1. A square 300 μ m device exhibits a logarithmic impedance behavior yielding a response of Δ R/R of 1.6× 10-3 bar-1. The realized pressure devices are a first step toward a SiC ASIC + MEMS platform for intended operation in harsh environments, such as industrial process monitoring, combustion control or structural health monitoring. The future outlook of the integration concept implies extended functionality by front-end transducer read-out, signal amplification and communication.</p>

Topics
  • Deposition
  • impedance spectroscopy
  • surface
  • aluminium
  • carbide
  • combustion
  • Silicon
  • titanium
  • forming