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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Almuneau, Guilhem
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2025Near-infrared transparent conductive electrodes based on composite GaAs-metal deep sub-wavelength high contrast grating
- 2023Oxidation of III-V semiconductors and applications ; Oxydation des semiconducteurs III-V et applications
- 2023Two birds with one tool: using thermocompression for both metallic contact annealing and wafer bonding of GaAs solar cells ; Faire d'une pierre deux coups : utilisation de la thermocompression pour le recuit des contacts métalliques et le collage de cellules solaires en GaAs
- 2019Controlled Oxidation of III-V Semiconductors for Photonic Devices
- 2019Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µmcitations
- 2019Towards MIR VCSELs operating in CW at RT
- 2019Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µmcitations
- 2019Electro-Absorption Modulator vertically integrated on a VCSEL: microstrip-based high-speed electrical injection on top of a BCB layercitations
- 2018Anisotropy in the wet thermal oxidation of AlGaAs: influence of process parameterscitations
- 2018Modelling anisotropic lateral oxidation from circular mesascitations
- 2018Coupled-mode analysis of vertically-coupled AlGaAs/AlOx microdisk resonatorscitations
- 2017Oxide-confined VCSELs fabricated with a simple self-aligned process flowcitations
- 2017Coupled mode analysis of micro-disk resonators with an asymmetric- index-profile coupling region
- 2017Single lithography-step self-aligned fabrication process for Vertical-Cavity Surface-Emitting Laserscitations
- 2017Pseudomorphic and metamorphic (Al)GaAsSb/(Al)InGaAs tunnel junctions for GaAs based Multi-Junction Solar Cells
- 2017Buried Waveguides using a Quasi-Planar Process
- 2017Anisotropic oxidation of circular mesas for complex confinement in photonic devices: Experiments and modelling
- 2016III-V-semiconductor vertically-coupled whispering-gallery mode resonators made by selective lateral oxidation
- 2016Self-aligned BCB planarization method for high frequency signal injection in a VCSEL with an integrated modulatorcitations
- 2015Vertically Coupled Microdisk Resonators Using AlGaAs/AlOx Technologycitations
- 2015AlOx/AlGaAs technology for multi-plane integrated photonic devices
- 2014Efficient excitation of photoluminescence in a two-dimensional waveguide consisting of a quantum dot-polymer sandwich-type structurecitations
- 2008Real-time in-situ monitoring of wet thermal oxidation for precise confinement in VCSELscitations
Places of action
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article
Coupled-mode analysis of vertically-coupled AlGaAs/AlOx microdisk resonators
Abstract
This article reports the experimental and theoretical assessments of the optical characteristics of recently-introduced vertically-coupled microdisk resonators made by selective oxidation of AlGaAs multilayer structures. Experimental measurements show that the Q-factors are in the 10 3 to 10 4 range for diameters ranging from 75 to 300 µm. To establish the origins of this limited performance a coupled-mode-theory-based model of the single-access-waveguide-coupled resonator system was developed. It includes features which are specific to oxide-based vertically-coupled resonators, namely losses towards the slab waveguide lying under the resonator and a coupling region with an asymmetric and multilayer structure. Setting this simulation tool required the proposal and validation of a general criterion to select an appropriate set of decomposition permittivity profiles to be able to accurately model the characteristics of these more complex couplers using the coupled-mode-theory approach. This theoretical development is generic and can be now deployed to simulate any device which includes multi-waveguide couplers with arbitrary piece-wise-constant profile of the dielectric permittivity. Exploiting this particular development and experimental measurements of the disk sidewall roughness and of the coupling lengths, the calculated and experimental Q-factors are found to be in good agreement and allow establishing that the current performance is limited by the scattering losses and the slab-leakage losses for small-and large-diameter devices respectively.