• Raj, Vidur
• Rougieux, Fiacre

Abstract

<p>Most recently, III-V based ultrathin solar cells have attracted considerable attention for their inherent advantages, such as increased tolerance to defect recombination, efficient charge carrier separation, photon recycling, flexibility, and reduced material consumption. However, so far, almost all reported devices make use of conventional doped p-i-n kind of structures with a wide-bandgap III-V lattice-matched epitaxial window layer, for passivation and reduced contact recombination. Here, we show that a high-efficiency device can be obtained utilizing an InP thin film of thickness as low as 280 nm, without the requirement of a conventional p-n homojunction or epitaxial window layer. This is achieved by utilizing a wide-bandgap electron and hole selective contacts for electrons and holes transport, respectively. Under ideal conditions [assuming interface recombination velocity (IRV) = 103 cm/s and bulk lifetime = 1 μs], the proposed solar cell structure can achieve efficiency as high as 28%. Although, in the presence of bulk and interface Shockley-Read-Hall recombination, the efficiency reduces, still for bulk minority carrier lifetime as low as 2 ns and an IRV as high as 105 cm/s, an efficiency of ∼22% can be achieved with InP thickness as low as 280 nm. The proposed device structure will be beneficial in cases where the growth of controlled p-n homojunction and window layer can be tedious as in case of low-cost deposition techniques, such as thin-film vapour-liquid-solid and close-spaced vapour transport.</p>

Topics

• Deposition
• impedance spectroscopy
• thin film
• defect