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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zhao, Yifeng
Delft University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2022The fundamental operation mechanisms of nc-SiOX≥0:H based tunnel recombination junctions revealedcitations
- 2022Achieving 23.83% conversion efficiency in silicon heterojunction solar cell with ultra-thin MoOx hole collector layer via tailoring (i)a-Si:H/MoOx interfacecitations
- 2021Design and optimization of hole collectors based on nc-SiOx:H for high-efficiency silicon heterojunction solar cellscitations
- 2020Copper-Plating Metallization With Alternative Seed Layers for c-Si Solar Cells Embedding Carrier-Selective Passivating Contactscitations
- 2020Realizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiO x/Poly-Si Passivating Contactscitations
- 2019High temperature oxidation pre-treatment of textured c-Si wafers passivated by a-Si:Hcitations
- 2019Effective Passivation of Black Silicon Surfaces via Plasma-Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layercitations
Places of action
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article
Copper-Plating Metallization With Alternative Seed Layers for c-Si Solar Cells Embedding Carrier-Selective Passivating Contacts
Abstract
<p>In this article, we develop in parallel two fabrication methods for copper (Cu) electroplated contacts suitable for either silicon nitride or transparent conductive oxide antireflective coatings. We employ alternative seed layers, such as evaporated Ag or Ti, and optimize the Ti-Cu or Ag-Cu contacts with respect to uniformity of plating and aspect ratio of the final plated grid. Moreover, we test plating/deplating sequence instead of a direct current plating or the SiO<sub>2</sub> layer approach to solve undesired plating outside the designed contact openings. The main objective of this paper is to explore the physical limit of this contact formation technology keeping the process compatible with industrial needs. In addition, we employ the optimized Cu-plating contacts in three different front/back-contacted crystalline silicon solar cells architectures: 1) silicon heterojunction solar cell with hydrogenated nanocrystalline silicon oxide as doped layers, 2) thin SiO<sub>2</sub>/doped poly-Si-poly-Si solar cell, and 3) hybrid solar cell endowed with rear thin SiO<sub>2</sub>/poly-Si contact and front heterojunction contact. To investigate the metallization quality, we compare fabricated devices to reference ones obtained with standard front metallization (Ag screen printing and Al evaporation). We observe a relatively small drop in V<sub>OC</sub> by 5 to 10 mV by using Cu-plating front grid, whereas fill factor was improved for solar cells with Cu-plated front contact if compared with evaporated Al.</p>