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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Bi, Qunyu
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article
Ion-implanted laser-annealed p+ and n+ Regions
Abstract
<p>The main challenge for interdigitated back-contact (IBC) solar cells is to reduce the fabrication complexity, which consists of multiple high-temperature processing and patterning steps. Patterned ion implantation has been proposed to simplify the manufacture of IBC solar cells, and the annealing of boron and phosphorus implanted areas is still a problem for the application. In this study, a new method consisting of laser annealing and a subsequent low-temperature oxidation (LA&OX) has been developed to co-anneal boron implanted p<sup>+</sup> and phosphorus implanted n<sup>+</sup> regions by a single step. We found that an additional laser annealing before oxidation could improve the electrical properties of boron-implanted p<sup>+</sup> regions effectively; however, it has almost no effect on the phosphorus-implanted n<sup>+</sup> regions. An industrially feasible IBC solar cell fabrication technology has been proposed based on the patterned ion implantation and LA&OX processing. The main fabrication steps of the IBC solar cell could be reduced to ten steps, and only one high-temperature oxidation step is required. As-designed IBC cell shows a potential efficiency higher than 23% according to simulations with the experimental parameters.</p>