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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Phang, Sieu Pheng
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2023Electron contact interlayers for low‐temperature‐processed crystalline silicon solar cellscitations
- 2022Gettering in silicon photovoltaicscitations
- 2021Investigation of Gallium-Boron Spin-On Codoping for poly-Si/SiOx Passivating Contactscitations
- 201922.6% Efficient Solar Cells with Polysilicon Passivating Contacts on n-type Solar-Grade Waferscitations
- 2018Effective impurity gettering by phosphorus- and boron-diffused polysilicon passivating contacts for silicon solar cellscitations
- 2018Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cellscitations
- 2015Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline siliconcitations
- 2014External and internal gettering of interstitial iron in silicon for solar cellscitations
- 2014The impact of SiO2/SiNrm x stack thickness on laser doping of silicon solar cellcitations
- 2013Secondary electron microscopy dopant contrast image (SEMDCI) for laser dopingcitations
- 2012Investigating internal gettering of iron at grain boundaries in multicrystalline silicon via photoluminescence imagingcitations
Places of action
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article
Secondary electron microscopy dopant contrast image (SEMDCI) for laser doping
Abstract
<p>Laser doping has been the subject of intense research over the past decade, due to its potential to enable high-efficiency, low-cost silicon solar cell fabrication. Information about the doping profile that is created by the process is critical for process optimization but is generally difficult to obtain. We apply the technique of secondary electron image (SEI) contrast to the characterization of the cross sections of laser-doped lines. We demonstrate that this technique can be used for a large range of different dopant sources and different laser doping methods and that good dopant contrast can be obtained under a relatively wide range of microscope parameters. Comparison of dopant contrast and doping density profiles shows that the substrate doping is an important parameter that can significantly influence the dopant contrast, particularly at low (∼10 $<sup>18</sup> cm$<sup>-3</sup>) and high (∼10 $<sup>20</sup> cm$<sup>-3</sup> ) dopant densities. When suitable calibration samples are used, the technique can be employed to obtain quantitative dopant density images for p-type laser-doped regions, albeit currently over a limited range of dopant densities and with relatively large error. Furthermore, the technique can be used to evaluate the risk of metallization shunts near the edges of dielectric film windows that are opened by the laser.</p>