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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Phang, Sieu Pheng
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2023Electron contact interlayers for low‐temperature‐processed crystalline silicon solar cellscitations
- 2022Gettering in silicon photovoltaicscitations
- 2021Investigation of Gallium-Boron Spin-On Codoping for poly-Si/SiOx Passivating Contactscitations
- 201922.6% Efficient Solar Cells with Polysilicon Passivating Contacts on n-type Solar-Grade Waferscitations
- 2018Effective impurity gettering by phosphorus- and boron-diffused polysilicon passivating contacts for silicon solar cellscitations
- 2018Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cellscitations
- 2015Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline siliconcitations
- 2014External and internal gettering of interstitial iron in silicon for solar cellscitations
- 2014The impact of SiO2/SiNrm x stack thickness on laser doping of silicon solar cellcitations
- 2013Secondary electron microscopy dopant contrast image (SEMDCI) for laser dopingcitations
- 2012Investigating internal gettering of iron at grain boundaries in multicrystalline silicon via photoluminescence imagingcitations
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article
Investigating internal gettering of iron at grain boundaries in multicrystalline silicon via photoluminescence imaging
Abstract
<p>In this paper, we present measurements and modeling of the reduction in dissolved iron Fe; concentrations near grain boundaries in multicrystalline silicon (mc-Si) wafers. The measurements of the interstitial Fe concentrations are obtained via photoluminescence images taken before and after iron-boron pair dissociation. A simple diffusion-capture model was developed to characterize the removal of interstitial Fe by the gettering sites. The model is based on a numerical solution to the 1-D diffusion equation with two fitting parameters: the diffusion length of dissolved Fe atoms and the effective gettering velocity at the gettering site. By comparing the simulation with a controlled phosphorous gettering process, the model is shown to give good estimation of the diffusion length of Fe atoms. For as-cut multicrystalline silicon wafers from different parts of the ingot, that is, wafers with different average dissolved Fe concentrations [Fe <sub>i</sub>], the diffusion lengths of Fe atoms are found to decrease with decreasing average [Fe- <sub>i</sub>]. This suggests the presence of relaxation precipitation during the internal gettering of dissolved Fe by the grain boundaries in mc-Si during ingot cooling.</p>