People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Gu, Erdan
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2020Gigabit per second visible light communication based on AlGaInP red micro-LED micro-transfer printed onto diamond and glasscitations
- 2017Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodescitations
- 2012Colloidal quantum dot nanocomposites for visible wavelength conversion of modulated optical signalscitations
- 2010Amplified spontaneous emission in free-standing membranes incorporating star-shaped monodisperse π-conjugated truxene oligomerscitations
- 2009Free-standing light-emitting organic nanocomposite membranes
- 2009Star-shaped oligofluorene nanostructured blend materialscitations
- 2009Hybrid GaN/organic microstructured light-emitting devices via ink-jet printingcitations
- 2008Integration by self-aligned writing of nanocrystal/epoxy composites on InGaN micropixelated light-emitting diodescitations
- 2008Light emitting polymer blends and diffractive optical elements in high-speed direct laser writing of microstructurescitations
- 2008Individually-addressable flip-chip AllnGaN micropixelated light emitting diode arrays with high continuous and nanosecond output powercitations
- 2006Hybrid inorganic/organic micro-structured light-emitting diodes produced by self-aligned direct writing
- 2006Microfabrication in free-standing gallium nitride using UV laser micromachiningcitations
- 2006Wavelength-tunable and white light emission from polymer-converted micropixellated InGaN ultraviolet light-emitting diodescitations
- 2004Micromachining and dicing of sapphire, gallium nitride and micro LED devices with UV copper vapour lasercitations
Places of action
Organizations | Location | People |
---|
article
Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes
Abstract
We demonstrate the development, performance and application of a GaN-based micro-light emitting diode (μLED) array sharing a common p-electrode (anode), and with individually addressable nelectrodes (cathodes). Compared to conventional GaN-based LED arrays, this array design employs a reversed structure of common and individual electrodes, which makes it innovative and compatible with n-type metal-oxide-semiconductor (NMOS) transistor-based drivers for faster modulation. Excellent performance characteristics are illustrated by an example array emitting at 450 nm. At a current density of 17.7 kA/cm2 in direct-current operation, the optical power and small signal electrical-to-optical modulation bandwidth of a single LED element with 24 μm diameter are over 2.0 mW and 440 MHz, respectively. The optimized fabrication process also ensures a high yield of working μLED elements per array, and excellent element-to-element uniformity of electrical/optical characteristics. Results on visible light communication are presented as an application of an array integrated with an NMOS driver. Data transmission at several hundred Mbps without bit error is achieved for single and multiple-μLED-element operations, under an on-off-keying modulation scheme. Transmission of stepped sawtooth waveforms is also demonstrated to confirm that the μLED elements can transmit discrete multi-level signals.