| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Gardes, Frederic Y.
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 20222D material based optoelectronics by electroplating
- 2019Tuning silicon-rich nitride microring resonances with graphene capacitors for high-performance computing applicationscitations
- 2015Wavelength division demultiplexer and integrated III-V semiconductor Lasers on a silicon photonics platform with microbubble manipulation
- 2015Ge-on-Si plasma enhanced chemical vapor deposition for low cost photodetectorscitations
- 2014Planar surface implanted diffractive grating couplers in SOIcitations
- 2014Locally erasable couplers for optical device testing in silicon on insulatorcitations
- 2014Silicon diffusion engineering in rapid melt growth of silicon-germanium on insulatorcitations
- 2010Carrier depletion based silicon optical modulatorscitations
- 2010Modulators and photodetectors developed in the framework of the European HELIOS project
Places of action
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article
Ge-on-Si plasma enhanced chemical vapor deposition for low cost photodetectors
Abstract
The development of low-thermal-budget Ge-on-Si epitaxial growth for the fabrication of low-cost Ge-on-Si devices is highly desirable for the field of silicon photonics. At present, most Ge-on-Si growth techniques require high growth temperatures, followed by cyclic annealing at temperatures >800 °C, often for a period of several hours. Here, we present a low-temperature (400 °C) low-cost plasma-enhanced chemical vapor deposition (PECVD) Ge-on-Si growth study and, subsequently, fabricate a high-speed zero-bias 12.5-Gb/s waveguide integrated photodetector with a responsivity of 0.1 A/W at a wavelength of 1550 nm. This low-energy device demonstrates the feasibility of the PECVD method for the fabrication of low-cost low-thermal-budget Ge-on-Si devices.