| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Sarro, Pasqualina
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2022Ultra-thin corrugated metamaterial film as large-area transmission dynodecitations
- 2021Highly-conformal sputtered through-silicon vias with sharp superconducting transitioncitations
- 2021Secondary electron emission from multi-layered TiN/Al2O3transmission dynodescitations
- 2020Fabrication of Al-based superconducting high-aspect ratio TSVs for quantum 3D integrationcitations
- 2018Effects of Conformal Nanoscale Coatings on Thermal Performance of Vertically Aligned Carbon Nanotubescitations
Places of action
| Organizations | Location | People |
|---|
article
Highly-conformal sputtered through-silicon vias with sharp superconducting transition
Abstract
<p>This paper describes the microfabrication and electrical characterization of aluminum-coated superconducting through-silicon vias (TSVs) with sharp superconducting transition above 1 K. The sharp superconducting transition was achieved by means of fully conformal and void-free DC-sputtering of the TSVs with Al, and is here demonstrated in up to 500μ m-deep vias. Full conformality of Al sputtering was made possible by shaping the vias with a tailored hourglass profile, which allowed a metallic layer as thick as 430 nm to be deposited in the center of the vias. Single-via electric resistance as low as 160 mΩ at room temperature and superconductivity at 1.27 K were measured by a three-dimensional (3D) cross-bridge Kelvin resistor structure. This work establishes a CMOS-compatible fabrication process suitable for arrays of superconducting TSVs and 3D integration of superconducting silicon-based devices. [2020-0354].</p>