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Bush, Mark
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Publications (4/4 displayed)
- 2007Poisson's Ratio of Low-Temperature PECVD Silicon Nitride Thin Filmscitations
- 2007Process condition dependence of mechanical and physical properties of silicon nitride thin filmscitations
- 2005Characterization of Mechanical Properties of Silicon Nitride Thin Films for MEMS Devices by Nanoindentation
- 2005Effects of deposition temperature on the mechanical and physical properties of silicon nitride thin filmscitations
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article
Poisson's Ratio of Low-Temperature PECVD Silicon Nitride Thin Films
Abstract
In this paper, the Poisson's ratio v of low-temperature plasma-enhanced chemical vapor deposited silicon nitride (SiNxHy) thin films has been determined by a modified double-membrane bulge test. This test method utilizes a square membrane and a large-aspect- ratio rectangular membrane that is fabricated alongside from the same thin film. The Poisson's ratio is determined from the ratio of the bulge deflections of the two membranes under an applied pressure. The method is suitable for determining v of either stress-free thin films or those containing low tensile residual stresses. Poisson's ratio values of 0.23 +/- 0.02 and 0.25 +/- 0.01 were measured for SiNxHy films that were deposited at 125 degrees C and 205 degrees C, respectively.