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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dell, John
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Topics
Publications (20/20 displayed)
- 2017Large-Area MEMS Tunable Fabry-Perot Filters for Multi/Hyperspectral Infrared Imagingcitations
- 2016Preparation and characterization of cerium substituted bismuth dysprosium iron garnets for magneto-optic applicationscitations
- 2015Investigation of ICPECVD Silicon Nitride Films for HgCdTe Surface Passivationcitations
- 2014Characterization of mechanical, optical and structural properties of bismuth oxide thin films as a write-once medium for blue laser recordingcitations
- 2014Characterization of mechanical, optical and structural properties of bismuth oxide thin films as a write-once medium for blue laser recording
- 2014Investigation of cerium-substituted europium iron garnets deposited by biased target ion beam depositioncitations
- 2014GaSb: A new alternative substrate for epitaxial growth of HgCdTecitations
- 2011Thermally induced damages of PECVD SiNx thin filmscitations
- 2007Dielectric thin films for MEMS-based optical sensorscitations
- 2007Poisson's Ratio of Low-Temperature PECVD Silicon Nitride Thin Filmscitations
- 2007Process condition dependence of mechanical and physical properties of silicon nitride thin filmscitations
- 2006Thermal Stability of PECVD SiN/sub x/ Filmscitations
- 2006Effect of oxidation on the chemical bonding structure of PECVD SiN thin filmscitations
- 2006Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin filmscitations
- 2005Characterization of Mechanical Properties of Silicon Nitride Thin Films for MEMS Devices by Nanoindentation
- 2005Effects of deposition temperature on the mechanical and physical properties of silicon nitride thin filmscitations
- 2005Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry-Perot optical filterscitations
- 2005Evaluation of Plasma Deposited Silicon Nitride Thin Flims for Microsystems Technologycitations
- 2004Laser-Beam-Induced Current Mapping of Spatial Nonuniformities in Molecular Beam Epitaxy As-Grown HgCdTecitations
- 2004Dark Currents in Long Wavelength Infrared HgCdTe Gated Photodiodescitations
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article
Poisson's Ratio of Low-Temperature PECVD Silicon Nitride Thin Films
Abstract
In this paper, the Poisson's ratio v of low-temperature plasma-enhanced chemical vapor deposited silicon nitride (SiNxHy) thin films has been determined by a modified double-membrane bulge test. This test method utilizes a square membrane and a large-aspect- ratio rectangular membrane that is fabricated alongside from the same thin film. The Poisson's ratio is determined from the ratio of the bulge deflections of the two membranes under an applied pressure. The method is suitable for determining v of either stress-free thin films or those containing low tensile residual stresses. Poisson's ratio values of 0.23 +/- 0.02 and 0.25 +/- 0.01 were measured for SiNxHy films that were deposited at 125 degrees C and 205 degrees C, respectively.