| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Musca, Charles
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2009Low temperature N2-based passivation technique for porous silicon thin filmscitations
- 2007Dielectric thin films for MEMS-based optical sensorscitations
- 2006Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin filmscitations
- 2005Characterization of Mechanical Properties of Silicon Nitride Thin Films for MEMS Devices by Nanoindentation
- 2005Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry-Perot optical filterscitations
- 2005Evaluation of Plasma Deposited Silicon Nitride Thin Flims for Microsystems Technologycitations
- 2004Laser-Beam-Induced Current Mapping of Spatial Nonuniformities in Molecular Beam Epitaxy As-Grown HgCdTecitations
- 2004Dark Currents in Long Wavelength Infrared HgCdTe Gated Photodiodescitations
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article
Evaluation of Plasma Deposited Silicon Nitride Thin Flims for Microsystems Technology
Abstract
Plasma deposited silicon nitride thin films were deposited at temperatures between 150 degrees C and 300 degrees C. Diagnostic microstructures were fabricated from the thin films using bulk micromachining, and the strain was calculated from optical measurement of postbuckling deflection. The results indicate that the residual strain of the thin films is dominated by film-substrate thermal mismatch, with the coefficient of thermal expansion monotonically increasing with decreasing deposition temperature. Metal-insulator-metal devices of variable area were also fabricated to measure the dielectric constant, which was shown to be independent of deposition temperature. The importance of these results to microsystems technology (MST) was briefly discussed.