| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Almuneau, Guilhem
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2025Near-infrared transparent conductive electrodes based on composite GaAs-metal deep sub-wavelength high contrast grating
- 2023Oxidation of III-V semiconductors and applications ; Oxydation des semiconducteurs III-V et applications
- 2023Two birds with one tool: using thermocompression for both metallic contact annealing and wafer bonding of GaAs solar cells ; Faire d'une pierre deux coups : utilisation de la thermocompression pour le recuit des contacts métalliques et le collage de cellules solaires en GaAs
- 2019Controlled Oxidation of III-V Semiconductors for Photonic Devices
- 2019Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µmcitations
- 2019Towards MIR VCSELs operating in CW at RT
- 2019Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µmcitations
- 2019Electro-Absorption Modulator vertically integrated on a VCSEL: microstrip-based high-speed electrical injection on top of a BCB layercitations
- 2018Anisotropy in the wet thermal oxidation of AlGaAs: influence of process parameterscitations
- 2018Modelling anisotropic lateral oxidation from circular mesascitations
- 2018Coupled-mode analysis of vertically-coupled AlGaAs/AlOx microdisk resonatorscitations
- 2017Oxide-confined VCSELs fabricated with a simple self-aligned process flowcitations
- 2017Coupled mode analysis of micro-disk resonators with an asymmetric- index-profile coupling region
- 2017Single lithography-step self-aligned fabrication process for Vertical-Cavity Surface-Emitting Laserscitations
- 2017Pseudomorphic and metamorphic (Al)GaAsSb/(Al)InGaAs tunnel junctions for GaAs based Multi-Junction Solar Cells
- 2017Buried Waveguides using a Quasi-Planar Process
- 2017Anisotropic oxidation of circular mesas for complex confinement in photonic devices: Experiments and modelling
- 2016III-V-semiconductor vertically-coupled whispering-gallery mode resonators made by selective lateral oxidation
- 2016Self-aligned BCB planarization method for high frequency signal injection in a VCSEL with an integrated modulatorcitations
- 2015Vertically Coupled Microdisk Resonators Using AlGaAs/AlOx Technologycitations
- 2015AlOx/AlGaAs technology for multi-plane integrated photonic devices
- 2014Efficient excitation of photoluminescence in a two-dimensional waveguide consisting of a quantum dot-polymer sandwich-type structurecitations
- 2008Real-time in-situ monitoring of wet thermal oxidation for precise confinement in VCSELscitations
Places of action
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article
Electro-Absorption Modulator vertically integrated on a VCSEL: microstrip-based high-speed electrical injection on top of a BCB layer
Abstract
Vertical-Cavity Surface-Emitting Lasers with vertically-integrated electro-absorption modulators (EAM-VCSELs) potentially can reach higher modulation bandwidths than directly current-modulated VCSELs. The aforementioned device modulation capabilities are however currently restricted by their electrical contact parasitics. It thus becomes critical to optimize their access line to improve performance. In this paper, we numerically and experimentally demonstrate that a microstrip (MS) access line using a planarized BCB layer exhibits improved high-frequency characteristics compared to the coplanar waveguide (CPW) access line used to-date since it reduces the losses induced by the doped substrates. We also use this opportunity to introduce an innovative technique for BCB-layer planarization which is not only compatible with the EAM-VCSEL double-mesa structure but is also independent of the device pitch. The resulting BCB layer dielectric permittivity and losses are measured up to 100 GHz and a side-by-side comparison of the electrical response of three-electrodes MS and CPW access lines is subsequently carried out. Finally, using the measured pad and access line RF responses and the EAM modulation characteristics, the devices with MS access are shown to be no longer limited by their electrode parasitics but by the modulator internal impedance.