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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Panajotov, Krassimir
Vrije Universiteit Brussel
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2019Electro-Absorption Modulator vertically integrated on a VCSEL: microstrip-based high-speed electrical injection on top of a BCB layercitations
- 2017Oxide-confined VCSELs fabricated with a simple self-aligned process flowcitations
- 2017Single lithography-step self-aligned fabrication process for Vertical-Cavity Surface-Emitting Laserscitations
- 2017Strain induced polarization chaos in a solitary VCSELcitations
- 2016Self-aligned BCB planarization method for high frequency signal injection in a VCSEL with an integrated modulatorcitations
- 2013Polarization Dynamics of VCSELs
- 2012Monitoring of gamma-irradiated Yb-doped optical fibers through pump induce refractive index changes effect
- 2010Photonic crystal vertical-cavity surface-emitting lasers with true photonic bandgap
- 2007Optimal radii of photonic crystal holes within DBR mirrors in long wavelength VCSEL
- 2002Polarization Behavior of Vertical-Cavity Surface-Emitting Lasers under the Influence of In-Plane Anisotropic Strain
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article
Electro-Absorption Modulator vertically integrated on a VCSEL: microstrip-based high-speed electrical injection on top of a BCB layer
Abstract
Vertical-Cavity Surface-Emitting Lasers with vertically-integrated electro-absorption modulators (EAM-VCSELs) potentially can reach higher modulation bandwidths than directly current-modulated VCSELs. The aforementioned device modulation capabilities are however currently restricted by their electrical contact parasitics. It thus becomes critical to optimize their access line to improve performance. In this paper, we numerically and experimentally demonstrate that a microstrip (MS) access line using a planarized BCB layer exhibits improved high-frequency characteristics compared to the coplanar waveguide (CPW) access line used to-date since it reduces the losses induced by the doped substrates. We also use this opportunity to introduce an innovative technique for BCB-layer planarization which is not only compatible with the EAM-VCSEL double-mesa structure but is also independent of the device pitch. The resulting BCB layer dielectric permittivity and losses are measured up to 100 GHz and a side-by-side comparison of the electrical response of three-electrodes MS and CPW access lines is subsequently carried out. Finally, using the measured pad and access line RF responses and the EAM modulation characteristics, the devices with MS access are shown to be no longer limited by their electrode parasitics but by the modulator internal impedance.