| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Gardes, Frederic Y.
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 20222D material based optoelectronics by electroplating
- 2019Tuning silicon-rich nitride microring resonances with graphene capacitors for high-performance computing applicationscitations
- 2015Wavelength division demultiplexer and integrated III-V semiconductor Lasers on a silicon photonics platform with microbubble manipulation
- 2015Ge-on-Si plasma enhanced chemical vapor deposition for low cost photodetectorscitations
- 2014Planar surface implanted diffractive grating couplers in SOIcitations
- 2014Locally erasable couplers for optical device testing in silicon on insulatorcitations
- 2014Silicon diffusion engineering in rapid melt growth of silicon-germanium on insulatorcitations
- 2010Carrier depletion based silicon optical modulatorscitations
- 2010Modulators and photodetectors developed in the framework of the European HELIOS project
Places of action
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article
Locally erasable couplers for optical device testing in silicon on insulator
Abstract
Wafer scale testing is critical to reducing production costs and increasing production yield. Here we report a method that allows testing of individual optical components within a complex optical integrated circuit. The method is based on diffractive grating couplers, fabricated using lattice damage induced by ion implantation of germanium. These gratings can be erased via localised laser annealing, which is shown to reduce the outcoupling efficiency by over 20 dB after the device testing is completed. Laser annealing was achieved by employing a CW laser, operating at visible wavelengths thus reducing equipment costs and allowing annealing through thick oxide claddings. The process used also retains CMOS compatibility.