| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Morales-Sánchez, Alfredo
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Publications (6/6 displayed)
- 2024Analysis of Wear Mechanisms Under Cutting Parameters: Influence of Double Layer TiAlN/TiN PVD and TiCN/Al2O3 Chemical Vapor Deposition-Coated Tools on Milling of AISI D2 Steelcitations
- 2022Discretization Approach for the Homogenization of Three-Dimensional Solid-Solid Phononic Crystals in the Quasi-Static Limit: Density and Elastic Modulicitations
- 2022Study of the Effect of Nitric Acid in Electrochemically Synthesized Silicon Nanocrystals: Tunability of Bright and Uniform Photoluminescencecitations
- 2013DC electroluminescence efficiency of silicon rich silicon oxide light emitting capacitorscitations
- 2013DC electroluminescence efficiency of silicon rich silicon oxide light emitting capacitorscitations
- 2012Comparison of electrical and electro-optical characteristics of light-emitting capacitors based on silicon-rich Si-oxide fabricated by plasma-enhanced chemical vapor deposition and ion implantationcitations
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article
DC electroluminescence efficiency of silicon rich silicon oxide light emitting capacitors
Abstract
<p>We analyze the influence of the fabrication technique and the silicon excess on the power efficiency and evolution with time of the electroluminescence of silicon rich silicon oxide in metal-oxide-semiconductor like light emitting capacitors under direct current. The silicon rich silicon oxide layers have been fabricated using two different techniques, namely plasma enhanced chemical vapor deposition and silicon ion implantation. Six different silicon excesses have been studied, ranging from 6 at. % to 15 at. %. It is shown that both the power efficiency and external quantum efficiency increase with the silicon excess due to a decrease in the electroluminescence current threshold. The maximum value of the power efficiency has been found to be (2.6 ± 0.3) × 10<sup>-5</sup> in the ion implanted sample with 15 at. % silicon excess. Significant differences in the evolution of the electroluminescence with time are found depending on the fabrication technique.</p>