| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Barreto, Jorge
University of Bristol
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2020An integrated optical modulator operating at cryogenic temperaturescitations
- 2019An integrated cryogenic optical modulator
- 2019An integrated cryogenic optical modulator
- 2019First cryogenic electro-optic switch on silicon with high bandwidth and low power tunabilitycitations
- 2013DC electroluminescence efficiency of silicon rich silicon oxide light emitting capacitorscitations
- 2013DC electroluminescence efficiency of silicon rich silicon oxide light emitting capacitorscitations
- 2012Comparison of electrical and electro-optical characteristics of light-emitting capacitors based on silicon-rich Si-oxide fabricated by plasma-enhanced chemical vapor deposition and ion implantationcitations
- 2012Resolving the ultrafast dynamics of charge carriers in nanocompositescitations
- 2007Comparative study between silicon-rich oxide films obtained by LPCVD and PECVDcitations
- 2006Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor depositioncitations
Places of action
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article
DC electroluminescence efficiency of silicon rich silicon oxide light emitting capacitors
Abstract
<p>We analyze the influence of the fabrication technique and the silicon excess on the power efficiency and evolution with time of the electroluminescence of silicon rich silicon oxide in metal-oxide-semiconductor like light emitting capacitors under direct current. The silicon rich silicon oxide layers have been fabricated using two different techniques, namely plasma enhanced chemical vapor deposition and silicon ion implantation. Six different silicon excesses have been studied, ranging from 6 at. % to 15 at. %. It is shown that both the power efficiency and external quantum efficiency increase with the silicon excess due to a decrease in the electroluminescence current threshold. The maximum value of the power efficiency has been found to be (2.6 ± 0.3) × 10<sup>-5</sup> in the ion implanted sample with 15 at. % silicon excess. Significant differences in the evolution of the electroluminescence with time are found depending on the fabrication technique.</p>