| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kreupl, Franz
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2020Patterning Platinum by Selective Wet Etching of Sacrificial Pt-A1 Alloycitations
- 2019Graphenic carbon as etching mask: patterning with laser lithography and KOH etching
- 2019Highly Reliable Contacts to Silicon Enabled by Low Temperature Sputtered Graphenic Carbon
- 2018Carbon Wonderland from an Engineering Perspective
- 2017Graphenic Carbon: A Novel Material to Improve the Reliability of Metal-Silicon Contactscitations
- 2016Graphenic Carbon-Silicon Contacts for Reliability Improvement of Metal-Silicon Junctions
- 2016Graphenic carbon-silicon contacts for reliability improvement of metal-silicon junctionscitations
- 2015Trap passivation in memory cell with metal oxide switching element
- 2013TRAP PASSIVATION IN MEMORY CELL WITH METAL OXIDE SWITCHING ELEMENT
- 2013Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications—Part I: Process Developmentcitations
- 2012Integrated circuit including doped semiconductor line having conductive cladding
- 2011Integrated circuit including doped semiconductor line having conductive cladding
- 2010INTEGRATED CIRCUIT INCLUDING DOPED SEMICONDUCTOR LINE HAVING CONDUCTIVE CLADDING
- 2009Integrated circuit including doped semiconductor line having conductive cladding
- 2007Silicon to nickel‐silicide axial nanowire heterostructures for high performance electronicscitations
- 2004High-current nanotube transistorscitations
- 2004Catalytic CVD of SWCNTs at Low Temperatures and SWCNT Devices
- 2004Chemical Vapor Deposition Growth of Single-Walled Carbon Nanotubes at 600 °C and a Simple Growth Modelcitations
- 2003Contact improvement of carbon nanotubes via electroless nickel depositioncitations
- 2001Method for fabricating an integrated circuit having at least one metallization plane
- 2001Template grown multiwall carbon nanotubes
Places of action
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article
Highly Reliable Contacts to Silicon Enabled by Low Temperature Sputtered Graphenic Carbon
Abstract
Titanium silicide (TiSi) contacts are frequently used metal-silicon contacts but are known to diffuse into the active region under high current density stress pulses. Recently, we demonstrated that graphenic carbon (GC) deposited by CVD at 1000∘C on silicon has the same low Schottky barrier as TiSi, but a much improved reliability against high current density stress pulses. In this paper we demonstrate now that the deposition of graphenic carbon is possible at 100∘C -400∘C by a sputter process. We show that the sputtered carbon-silicon (SC-Si) contact is over 1 billion times more stable against high current density pulses than the conventionally used TiSi-Si junction, while it has the same or even a lower Schottky barrier. SC can be doped by nitrogen (CN) and this results in an even lower resistivity and improved stability. Scalability of the CN thickness down to 5nm is demonstrated. The finding that there is a low temperature approach for using the excellent carbon properties has important consequences for the reliability of contacts to silicon and opens up the use of GC in a vast number of other applications.