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Vaz Pinto, Joana
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Topics
Publications (12/12 displayed)
- 2023Parylene-Sealed Perovskite Nanocrystals Down-Shifting Layer for Luminescent Spectral Matching in Thin Film Photovoltaicscitations
- 2023Self-sensing metallic material based on PZT particles produced by friction stir processing envisaging structural health monitoring applicationscitations
- 2022Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductorscitations
- 2016Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistorscitations
- 2016Photocatalytic behavior of TiO2 films synthesized by microwave irradiationcitations
- 2016Effect of Mg doping on Cu2O thin films and their behavior on the TiO2/Cu2O heterojunction solar cellscitations
- 2016Smart optically active VO2 nanostructured layers applied in roof-type ceramic tiles for energy efficiencycitations
- 2014PVA composite catalytic membranes for hyacinth flavour synthesis in a pervaporation membrane reactorcitations
- 2013Current transport mechanism at metal-semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillarscitations
- 2013P-Type CuxO thin-film transistors produced by thermal oxidationcitations
- 2013Formation of oriented nickel aggregates in rutile single crystals by Ni implantationcitations
- 2012p-Type CuxO Films Deposited at Room Temperature for Thin-Film Transistorscitations
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article
P-Type CuxO thin-film transistors produced by thermal oxidation
Abstract
<p>Thin-films of copper oxide Cu O were produced by thermal oxidation of metallic copper (Cu) at different temperatures (150-450 C). The films produced at temperatures of 200, 250 and 300 C showed high Hall motilities of 2.2, 1.9 and 1.6 cm V s , respectively. Single Cu O phases were obtained at 200 C and its conversion to CuO starts at 250 C. For lower thicknesses 40 nm, the films oxidized at 250 C showed a complete conversion to CuO phase. Successful thin-film transistors (TFTs) were produce by thermal oxidation of a 20 nm Cu film, obtaining p-type Cu O (at 200 C) and CuO (at 250 C) with On/Off ratios of 6 10 and 1 10 , respectively.</p>