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Publications (4/4 displayed)
- 2012p-Type CuxO Films Deposited at Room Temperature for Thin-Film Transistorscitations
- 2008Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperaturecitations
- 2008Effect of annealing on the properties of RF sputtered indium molybdenum oxide thin filmscitations
- 2008Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applicationscitations
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article
p-Type CuxO Films Deposited at Room Temperature for Thin-Film Transistors
Abstract
Thin-films of copper oxide (Cu infinity O) were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure O-PP. A metallic Cu film with cubic structure obtained from 0% O-PP has been transformed to cubic Cu2O phase for the increase in O to 9% but then changed to monoclinic CuO phase (for OPP >= 25%). The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstructures). The Cu O films produced with O ranging between 9% and 75% showed p-type behavior, which were successfully applied to produce thin-film transistors.