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| Naji, M. |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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| Azevedo, Nuno Monteiro |
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Vaz Pinto, Joana
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Topics
Publications (12/12 displayed)
- 2023Parylene-Sealed Perovskite Nanocrystals Down-Shifting Layer for Luminescent Spectral Matching in Thin Film Photovoltaicscitations
- 2023Self-sensing metallic material based on PZT particles produced by friction stir processing envisaging structural health monitoring applicationscitations
- 2022Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductorscitations
- 2016Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistorscitations
- 2016Photocatalytic behavior of TiO2 films synthesized by microwave irradiationcitations
- 2016Effect of Mg doping on Cu2O thin films and their behavior on the TiO2/Cu2O heterojunction solar cellscitations
- 2016Smart optically active VO2 nanostructured layers applied in roof-type ceramic tiles for energy efficiencycitations
- 2014PVA composite catalytic membranes for hyacinth flavour synthesis in a pervaporation membrane reactorcitations
- 2013Current transport mechanism at metal-semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillarscitations
- 2013P-Type CuxO thin-film transistors produced by thermal oxidationcitations
- 2013Formation of oriented nickel aggregates in rutile single crystals by Ni implantationcitations
- 2012p-Type CuxO Films Deposited at Room Temperature for Thin-Film Transistorscitations
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article
p-Type CuxO Films Deposited at Room Temperature for Thin-Film Transistors
Abstract
Thin-films of copper oxide (Cu infinity O) were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure O-PP. A metallic Cu film with cubic structure obtained from 0% O-PP has been transformed to cubic Cu2O phase for the increase in O to 9% but then changed to monoclinic CuO phase (for OPP >= 25%). The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstructures). The Cu O films produced with O ranging between 9% and 75% showed p-type behavior, which were successfully applied to produce thin-film transistors.