| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dekker, Ronald
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2023A Comparative Study of Si3N4 and Al2O3 as Dielectric Materials for Pre-Charged Collapse-Mode CMUTscitations
- 2023An Ultrasonically Powered System Using an AlN PMUT Receiver for Delivering Instantaneous mW-Range DC Power to Biomedical Implantscitations
- 2023Flip-chip bonding of InP die on SiN-based TriPleX carrier with novel laser solderingcitations
- 2023Flip-chip bonding of InP die on SiN-based TriPleX carrier with novel laser solderingcitations
- 2022Photonic flip-chip assembly of InP on TriPleX with laser soldering
- 2022Photonic flip-chip assembly of InP on TriPleX with laser soldering
- 2021The long-term reliability of pre-charged CMUTs for the powering of deep implanted devicescitations
- 2021Pre-charged collapse-mode capacitive micromachined ultrasonic transducer (CMUT) for broadband ultrasound power transfercitations
- 2020Embedded High-Density Trench Capacitors for Smart Catheterscitations
- 2019Effect of Signals on the Encapsulation Performance of Parylene Coated Platinum Tracks for Active Medical Implantscitations
- 2015Silicon-Based Technology for Integrated Waveguides and mm-Wave Systemscitations
Places of action
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conferencepaper
A Comparative Study of Si3N4 and Al2O3 as Dielectric Materials for Pre-Charged Collapse-Mode CMUTs
Abstract
Capacitive Micromachined Ultrasound Transducers (CMUTs) have many advantages compared to other ultrasonic transducer technologies, especially for implantable devices. However, they require a high bias voltage for efficient operation. To eliminate the need for an external bias voltage, a charge storage layer can be embedded in the dielectric. This study aims to compare the performance of Si 3 N 4 and Al 2 O 3 when used as a charge storage layer. By measuring the shift in the C-V curve, Si 3 N 4 exhibits a larger shift than Al 2 O 3 , indicating a better charge-trapping capability. When using the pre-charged CMUTs as power receivers, the Si 3 N 4 version harvested up to 80 mW -only a few mW more than the Al 2 O 3 - with an efficiency of about 50 %. Accelerated Lifetime Tests predict a lifetime of about 7.8 and 1.2 years for Si 3 N 4 and Al 2 O 3 respectively. ; Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. ; Electronic Components, Technology and Materials ; Bio-Electronics