• Loo, Roger
• Vandervorst, Wilfried
• Ramesh, Anisha
• Berger, Paul R.
• Douhard, Bastien

Abstract

<p>Negative differential resistance (NDR) devices in conjunction with MOS transistors provide a high speed, low power alternate to complementary metal oxide semiconductor (CMOS) technology. Boolean logic with gate-level pipelining has been demonstrated using monostable-bistable logic (MOBILE) gates. Application to low-power embedded memory is also promising. A key hurdle for tunneling based devices is development of a manufacturable process that can be integrated into a CMOS process line. Monolithic integration of low- temperature molecular beam epitaxy (LT-MBE) grown Si/SiGe resonant interband tunnel diodes (RITD) with NMOS has been demonstrated. However, chemical vapor deposition (CVD) is the dominant epitaxial growth technique for semiconductor manufacturing. The first CVD grown Si/SiGe RITD was demonstrated with a peak-to-valley current ratio (PVCR) of 1.85. In this work, further optimization of boron -doping has resulted in high PVCR up to 5.2. Current density dependence on tunneling barrier thickness is also investigated.</p>

Topics

• density
• impedance spectroscopy
• semiconductor
• Boron
• current density
• chemical vapor deposition