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Myśliwiec, Marcin
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Topics
Publications (13/13 displayed)
- 2022Influence of Ag particle shape on mechanical and thermal properties of TIM jointscitations
- 2022Pressureless Direct Bonding of Au Metallized Substrate with Si Chips by Micro-Ag Particlescitations
- 2019Development of SLID Bonding Technology for GaN Assembly Based on Ag Microflakescitations
- 2018Solid-Liquid Interdiffusion Bonding Based on Au-Sn Intermetallic for High Temperature Applicationscitations
- 2017Combination of Solid-Liquid Interdiffusion and Sintering Bonding for GaN Devices Assemblycitations
- 2017Fluxless Pressure Ag Sintering in Creation of Au-Ag Connection Systems
- 2016Properties of silicon nitride thin overlays deposited on optical fibers – effect of fiber suspension in radio frequency plasma-enhanced chemical vapor deposition reactorcitations
- 2016Challenges in packaging of IR detectors – technology of elastic electrical connectionscitations
- 2016Die attach by diffusion Sn-Ag-Sn soldering in high temperature electronics applicationscitations
- 2016Application of Direct Bonded Copper Substrates for Prototyping of Power Electronic Modulescitations
- 2015Challenges in packaging of IR detectors – technology of elastic electrical connections
- 2014Materials and Technological Aspects of High-Temperature SiC Package Reliability
- 2014Thermal characteristics of SiC diode assembly to ceramic substratecitations
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document
Development of SLID Bonding Technology for GaN Assembly Based on Ag Microflakes
Abstract
This paper covers the main aspects of applying SLID (Solid Liquid InterDiffusion bonding) for assembly of GaN structures to DBC (Direct Bonded Copper) substrates with Sn metallization. The influence of GaN ohmic contact metallization, Sn thickness on DBC as well as bonding parameters (pressure, temperature, time) on adhesion of GaN structures to DBC substrate were investigated. It was found that the weakest points of adhesion are the interfaces between micro-Ag sintered layer and surfaces of GaN or DBC metallization. The cohesion of micro-Ag layer sintered at 8 MPa/280 o C exceeds 20 MPa.