| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Myśliwiec, Marcin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2022Influence of Ag particle shape on mechanical and thermal properties of TIM jointscitations
- 2022Pressureless Direct Bonding of Au Metallized Substrate with Si Chips by Micro-Ag Particlescitations
- 2019Development of SLID Bonding Technology for GaN Assembly Based on Ag Microflakescitations
- 2018Solid-Liquid Interdiffusion Bonding Based on Au-Sn Intermetallic for High Temperature Applicationscitations
- 2017Combination of Solid-Liquid Interdiffusion and Sintering Bonding for GaN Devices Assemblycitations
- 2017Fluxless Pressure Ag Sintering in Creation of Au-Ag Connection Systems
- 2016Properties of silicon nitride thin overlays deposited on optical fibers – effect of fiber suspension in radio frequency plasma-enhanced chemical vapor deposition reactorcitations
- 2016Challenges in packaging of IR detectors – technology of elastic electrical connectionscitations
- 2016Die attach by diffusion Sn-Ag-Sn soldering in high temperature electronics applicationscitations
- 2016Application of Direct Bonded Copper Substrates for Prototyping of Power Electronic Modulescitations
- 2015Challenges in packaging of IR detectors – technology of elastic electrical connections
- 2014Materials and Technological Aspects of High-Temperature SiC Package Reliability
- 2014Thermal characteristics of SiC diode assembly to ceramic substratecitations
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document
Solid-Liquid Interdiffusion Bonding Based on Au-Sn Intermetallic for High Temperature Applications
Abstract
This paper covers one of the aspects of solid-liquid interdiffusion (SLID) bonding of semiconductor structures to substrate for high temperature operation. Investigations were focused on Au/Sn intermetallic compounds formed at the interface between Au metallization on the chip and Sn metallization on the DBC (Direct Bonded Copper) substrate. Two version of SLID were applied: one stage process at 350°C and two stage process short time at 280 °C + long time at 180°C. Second process is divided into two steps: short high temperature (280°C) step for melting Sn and initial intermetallic compound formation and long low temperature (180°C) step for solid state diffusion process. Design of experiments technique was used for process optimization. The best process parameters were obtained and they were applied for monocrystalline GaN chips assembly to DBC substrates. In the long-term stability tests at 300°C it was proven that both versions of investigated SLID technique can be applied for monocrystalline GaN chips assembly. Critical condition for this assembly operation is high enough pressure applied on the chip to initiate diffusion process.