| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Kisiel, Ryszard
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2022Influence of Ag particle shape on mechanical and thermal properties of TIM jointscitations
- 2022Pressureless Direct Bonding of Au Metallized Substrate with Si Chips by Micro-Ag Particlescitations
- 2020Development of Assembly Techniques for Connection of AlGaN/GaN/Si Chips to DBC substratecitations
- 2019Development of SLID Bonding Technology for GaN Assembly Based on Ag Microflakescitations
- 2019Electrical properties of vertical GaN Schottky diodes on Ammono-GaN substratecitations
- 2018Solid-Liquid Interdiffusion Bonding Based on Au-Sn Intermetallic for High Temperature Applicationscitations
- 2017Combination of Solid-Liquid Interdiffusion and Sintering Bonding for GaN Devices Assemblycitations
- 2017Fluxless Pressure Ag Sintering in Creation of Au-Ag Connection Systems
- 2016Challenges in packaging of IR detectors – technology of elastic electrical connectionscitations
- 2016Die attach by diffusion Sn-Ag-Sn soldering in high temperature electronics applicationscitations
- 2016Application of Direct Bonded Copper Substrates for Prototyping of Power Electronic Modulescitations
- 2015Challenges in packaging of IR detectors – technology of elastic electrical connections
- 2014Materials and Technological Aspects of High-Temperature SiC Package Reliability
- 2014Thermal characteristics of SiC diode assembly to ceramic substratecitations
- 2011Mechanical and Thermal Properties of SiC – Ceramics Substrate Interface
- 2011Mechanisms of carriers transport in Ni/n-SiC, Ti/n-SiC ohmic contactscitations
- 2010Overview of Materials and Bonding Techniques for Inner Connections in SiC High Power and High Temperature Applicationscitations
- 2009Stability of gold bonding and Ti/Au ohmic contact metallization to n-SiC in high power devicescitations
- 2004(Sn-Ag)eut Cu Soldering Materials, Part I: Wettability Studiescitations
- 2004(Sn-Ag)eut Cu Soldering Materials, Part II
Places of action
| Organizations | Location | People |
|---|
document
Combination of Solid-Liquid Interdiffusion and Sintering Bonding for GaN Devices Assembly
Abstract
In this paper the combination of solid-state interdiffusion with silver sintering is presented as a supplementary technique for assembly of high temperature devices. The design of the experiments technique is used to study the influence of process temperature, time and thickness of used Sn layers on the assembly process. Identical pressure for assembly and flux application was used in every experiment. In the study GaN chips (Ammono) with Au bottom metallization and DBC (alumina ceramic, double sided covered Cu) were used as test materials. Shear test was performed to test adhesion of the chip to the substrate. Results of statistical analysis of adhesion are presented and the best process parameters for GaN assembly to DBC substrate are identified.