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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Szczepański, Zbigniew
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2016Challenges in packaging of IR detectors – technology of elastic electrical connectionscitations
- 2015Challenges in packaging of IR detectors – technology of elastic electrical connections
- 2011Mechanical and Thermal Properties of SiC – Ceramics Substrate Interface
- 2010Overview of Materials and Bonding Techniques for Inner Connections in SiC High Power and High Temperature Applicationscitations
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document
Overview of Materials and Bonding Techniques for Inner Connections in SiC High Power and High Temperature Applications
Abstract
Therearetwomaintechnicalproblemswhichshouldbeovercomeforpracticalapplications of SiC power devices. One of them is the formation of reproducible ohmic contacts andsecond one is creation connection system between SiC ohmic contacts and package leads. The paperpresentsacompatibilityofmaterialssystemformetallizationofohmiccontactston-SiCandmetallization of DBC substrate pads which both are well-suited and able to create stable connectionsystem using wire bonding or flip chip bonding techniques. Such materials systems should work attemperatures up to 350°C or higher. Al and Au were applied as materials for wire bonding or flip chipbonding.OurexperimentsallowtoconcludethatforhightemperatureapplicationstheAlwirebonding to SiC/Ti ohmic contacts with Al top metallization and DBC substrate with Ni metallizationshouldbegoodindevicesworkingupto350°C. Moreover, Au wire bonding to the SiC/Ti ohmiccontactwithAuorPttopmetallizationandtheDBCsubstratecoveredNi/Aucanbeappliedindevicesworkingupto400°C. For Au balls flip chip bonding a good solution is the SiC/Ti ohmiccontact with Au or Pt top metallization and the DBC substrate with Ni/Au metallization. Such systemcan work up to 350°C.