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Pagowska, K.
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document
Stability of gold bonding and Ti/Au ohmic contact metallization to n-SiC in high power devices
Abstract
The stability of SiC/Ti/Au ohmic contacts as well as the strength of Au wire connection onto n-SiC chips were investigated. The ohmic contact to n-SiC was formed by rapid thermal annealing of Ti film and Au metallization has been applied to form electrical connections using Au wire bonds. Long-term tests of the connections were performed in air at 400degC. Evaluation of electrical parameters as well as stable morphology and structure of the metallization show good stability of the Au based electrical connections.