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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ascoli, Alon
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Publications (4/4 displayed)
- 2022Physics-based modeling of a bi-layer Al₂O₃/Nb₂O₅ analog memristive device.citations
- 2022Graph Coloring via Locally-Active Memristor Oscillatory Networkscitations
- 2018Ultrasensitive detection of Ebola matrix protein in a memristor modecitations
- 2017Gap engineering for improved control of memristor nanosensorscitations
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document
Physics-based modeling of a bi-layer Al₂O₃/Nb₂O₅ analog memristive device.
Abstract
<p>This paper proposes the derivation of a physics-based model of an analog memristive device realized as a bi-layer Al<sub>2</sub>O<sub>3</sub>/Nb<sub>2</sub>O<sub>5</sub> stack. Memristive crossbar arrays implementing matrix-vector multiplications are a central building block of novel computing-in-memory architectures for artificial neural network and neuromorphic computing applications. The presented memristor shows analog, multi-level switching at high resistances without electroforming and is suitable for crossbar operations with low energy consumption. By including a graphical analysis method of the I-V curves obtained in a quasi-static approach, the dynamic behavior is analyzed with regard to ohmic and Poole-Frenkel behavior. Finally, a compact model, represented by an algebraic differential equation, is proposed and verified by fitting calculated solutions to experimental data.</p>