693.932 PEOPLE
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| Naji, M. |
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| Petrov, R. H. | Madrid |
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Kirste, Lutz
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (46/46 displayed)
- 2024Understanding Interfaces in AlScN/GaN Heterostructurescitations
- 2024Coalescence as a key process in wafer-scale diamond heteroepitaxycitations
- 2024Coalescence as a key process in wafer-scale diamond heteroepitaxycitations
- 2024Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmospherecitations
- 2024Epitaxial Lateral Overgrowth of Wafer‐Scale Heteroepitaxial Diamond for Quantum Applicationscitations
- 2024Online and Ex Situ Damage Characterization Techniques for Fiber-Reinforced Composites under Ultrasonic Cyclic Three-Point Bendingcitations
- 2024Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15Ncitations
- 2024Ultrasonic reconsolidation of separated CF-PEEK composite layers at 20 kHz — an experimental study on parameter optimization and Ex-situ characterizationcitations
- 2024Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al<sub>0.85</sub>Sc<sub>0.15</sub>Ncitations
- 2024Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal-organic chemical vapor depositioncitations
- 2024Understanding interfaces in AlScN/GaN heterostructurescitations
- 2023A Study on the Performance of AlGaN/GaN HEMTs Regrown on Mg-Implanted GaN Layers with Low Channel Thicknesscitations
- 2023Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaNcitations
- 2023Metal‐Organic Chemical Vapor Deposition of Aluminum Yttrium Nitridecitations
- 2023AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition with 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHzcitations
- 2023Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxycitations
- 2023Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal-Organic Chemical Vapor Depositioncitations
- 2023Enhanced AlScN/GaN heterostructures grown with a novel precursor by metal–organic chemical vapor depositioncitations
- 2022Al1-xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal Expansioncitations
- 2022Leakage mechanism in AlxGa1-xN/GaN heterostructures with AlN interlayercitations
- 2022Rayleigh waves in nonpolar Al0.7Sc0.3N(1120) films with enhanced electromechanical coupling and quality factorcitations
- 2022Effect of V/III ratio and growth pressure on surface and crystal quality of AlN grown on sapphire by metal-organic chemical vapor depositioncitations
- 2022In-situ Detection of Degradation in Power Electronic Modules During Lifetime Testing using Lock-in Thermography
- 2021Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor depositioncitations
- 2021Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor depositioncitations
- 2020In situ approach to fabricate heterojunction p-n CuO-ZnO nanostructures for efficient photocatalytic reactionscitations
- 2020Investigations of the deuterium permeability of as-deposited and oxidized Ti2AlN coatingscitations
- 2020Expitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistorscitations
- 2020Metal-organic chemical vapor deposition of aluminum scandium nitridecitations
- 2020Optimization of metal-organic chemical vapor deposition regrown n-GaN ; Optimization of MOCVD Regrown n-GaNcitations
- 2018Elastic modulus and coefficient of thermal expansion of piezoelectric Al1-xScxN (up to x = 0.41) thin filmscitations
- 2018Elastic modulus and coefficient of thermal expansion of piezoelectric Al1−xScxN (up to x = 0.41) thin filmscitations
- 2018Microstructural investigations of polycrystalline Ti2AlN prepared by physical vapor deposition of Ti-AlN multilayerscitations
- 2018A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etchingcitations
- 2018Piezoelectric characterization of Sc0.26Al0.74N layers on Si (001) substratescitations
- 2018Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devicescitations
- 2018Temperature dependence of the pyroelectric coefficient of AlScN thin filmscitations
- 2016Piezoelectric AlN films for FPW sensors with improved device performancecitations
- 2015Synchrotron white-beam x-ray topography analysis of the defect structure of HVPE-GaN substratescitations
- 2012Diamond nanophotonicscitations
- 2012Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTscitations
- 2010Investigation of stress in AIN thin films for piezoelectric MEMS
- 2009Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An X-ray diffraction study ; Sauerstoff induzierte Verspannungshomogenisierung in AlN Nukleationsschichten und deren Einfluss auf MOVPE GaN Schichten auf Saphir: Eine Röntgendiffraktometrie-Studiecitations
- 2006X-ray topographic imaging of (AI,Ga)N/GaN based electronic device structures on SiC ; Röntgentopographie an (Al,Ga)N/GaN basierenden elektronischen Bauelementstrukturen auf SiCcitations
- 2004High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 µm wavelength range ; GaInAsN und GaInAsN Quantenfilm-Diodenlaser mit hohen In-Gehalt auf InP-Substrat mit Emissionswellenlängen im Bereich 2,2-2,3 µmcitations
- 2003Wachstum und Realstruktur von epitaktischen (Al,Ga)N-Schichten ; Growth and defectstructure of Epitaxial (Al,Ga)N-Layers
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conferencepaper
Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devices
Abstract
S.518-522 ; This contribution assesses the potential of quantitative cathodoluminescence spectroscopy (CL) to speed up microelectronics development and failure analysis (FA). It does so through a recent example study performed on a High Electron Mobility Transistor substrate stack structure. The technique, performed on an Attolight AllalinTM tool, shows capabilities such as defect identification, stack layer recognition. In a second analysis step, the respective contributions of strain and composition variations are determined in AlGaN system, suggesting that at least in this case, composition and temperature trump strain in terms of contribution importance. This leads to the determination within less than 1% of the Al concentration in AlxGa1-xN alloys, which is at least as good as TEM EDS techniques, and is 1-2 orders of magnitude faster.