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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Poppitz, David
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2024Magnetic Resonance Imaging-Based Monitoring of the Accumulation of Polyethylene Terephthalate Nanoplastics
- 2021Mass Transfer in Hierarchical Silica Monoliths Loaded With Pt in the Continuous-Flow Liquid-Phase Hydrogenation of p-Nitrophenolcitations
- 2020Hydrophobic, carbon free gas diffusion electrode for alkaline applicationscitations
- 2018Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devicescitations
- 2017Ion Beam Assisted Deposition of Thin Epitaxial GaN Films
- 2017Ion Beam Assisted Deposition of Thin Epitaxial GaN Filmscitations
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conferencepaper
Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devices
Abstract
S.518-522 ; This contribution assesses the potential of quantitative cathodoluminescence spectroscopy (CL) to speed up microelectronics development and failure analysis (FA). It does so through a recent example study performed on a High Electron Mobility Transistor substrate stack structure. The technique, performed on an Attolight AllalinTM tool, shows capabilities such as defect identification, stack layer recognition. In a second analysis step, the respective contributions of strain and composition variations are determined in AlGaN system, suggesting that at least in this case, composition and temperature trump strain in terms of contribution importance. This leads to the determination within less than 1% of the Al concentration in AlxGa1-xN alloys, which is at least as good as TEM EDS techniques, and is 1-2 orders of magnitude faster.