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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Thoen, David
SRON Netherlands Institute for Space Research
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2022Model and Measurements of an Optical Stack for Broadband Visible to Near-Infrared Absorption in TiN MKIDscitations
- 2022Hydrogenated Amorphous Silicon Carbidecitations
- 2021Highly-conformal sputtered through-silicon vias with sharp superconducting transitioncitations
- 2021Highly-conformal sputtered through-silicon vias with sharp superconducting transitioncitations
- 2021Superconducting Microstrip Losses at Microwave and Submillimeter Wavelengthscitations
- 2020Fabrication of Al-based superconducting high-aspect ratio TSVs for quantum 3D integrationcitations
- 2020Fabrication of Al-based superconducting high-aspect ratio TSVs for quantum 3D integrationcitations
- 2017Reactive Magnetron Sputter Deposition of Superconducting Niobium Titanium Nitride Thin Films with Different Target Sizescitations
- 2017Performance of THz Components Based on Microstrip PECVD SiNx Technologycitations
- 2016Branchline and directional THz coupler based on PECVD SiNx-technologycitations
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document
Branchline and directional THz coupler based on PECVD SiNx-technology
Abstract
A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope.