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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Iannuzzo, Francesco
Aalborg University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Proof-of-Concept for an On-Chip Kelvin-Emitter RTD Sensor for Junction Temperature Monitoring of IGBTscitations
- 2023Thermal Characteristics of Liquid Metal Interconnects for Power Semiconductorscitations
- 2023Thermal Characteristics of Liquid Metal Interconnects for Power Semiconductorscitations
- 2019Comparative study of wire bond degradation under power and mechanical accelerated testscitations
- 2019Highly Reliable Package using Cu Particles Sinter Paste for Next Generation Power Devices
- 2019Cost-Effective Prognostics of IGBT Bond Wires With Consideration of Temperature Swingcitations
- 2018Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactionscitations
- 2018Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactionscitations
- 2018Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETscitations
- 2018Effect of short-circuit stress on the degradation of the SiO 2 dielectric in SiC power MOSFETscitations
- 2018Failure analysis of a degraded 1.2 kV SiC MOSFET after short circuit at high temperaturecitations
- 2017Impact of bending speed and setup on flex cracks in multilayer ceramic capacitorscitations
- 2016Short-Circuit Robustness Assessment in Power Electronic Modules for Megawatt Applicationscitations
- 2005FPGA implementation of the race-control algorithm for the full-bridge passive resonant commutated poles converter
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document
Failure analysis of a degraded 1.2 kV SiC MOSFET after short circuit at high temperature
Abstract
This paper presents the experimental results obtained from investigating the impact of short-circuit in SiC MOSFETs at high temperatures. The results indicate that a gate degradation mechanism occurs under a single-stress short circuit event at nominal voltage and junction temperature of 150° C. The failure mechanism is the gate breakdown, which can be early detected by monitoring the voltage drop of the gate-voltage waveform. The reduction of the gate voltage indicates that a leakage current flows through the gate, leading to a permanent damage of the device but preserving its voltage blocking capability. This hypothesis has been validated through semiconductor failure analysis by comparing the structure of a fresh and a degraded SiC MOSFET. A Focused Ion Beam cut is performed showing cracks between the poly-silicon gate and aluminium source. Furthermore alterations/particles near the source contact have been found for the degraded device.