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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Max, Benjamin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2024High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Densitycitations
- 2023Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodescitations
- 2022MOx in ferroelectric memories
- 2021Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memoriescitations
- 2019Uniting The Trinity of Ferroelectric HfO₂ Memory Devices in a Single Memory Cellcitations
- 2019Uniting the trinity of ferroelectric HfO2 memory devices in a single memory cellcitations
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document
Uniting the trinity of ferroelectric HfO2 memory devices in a single memory cell
Abstract
<p>The polarization reversal in ferroelectric HfO<sub>2</sub> is adopted to store information in three distinct device classes-ferroelectric field effect transistors (FeFET), ferroelectric capacitors (FeCAP) and ferroelectric tunnel junctions (FTJ). Common to all three concepts is the adoption of a ferroelectric layer stack that acts either as gate dielectric in the FeFET or as the capacitor dielectric and tunneling barrier in the FeCAP or FTJ, respectively. A composite structure including an inevitably or purposefully formed dielectric layer is frequently adopted. In this work we report on the co-existence of all three memory concepts within one device structure and propose a 2T1C ferroelectric memory cell that allows the operation and comparative characterization of the trinity of ferroelectric memory devices.</p>