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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kirkby, Karen Reeson
University of Manchester
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2013Chemical changes exhibited by latent fingerprints after exposure to vacuum conditions.citations
- 2013Integrated Ion Beam Analysis (IBA) in Gunshot Residue (GSR) characterisationcitations
- 2012Determination of the deposition order of overlapping latent fingerprints and inks using secondary ion mass spectrometry.citations
- 2010Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatmentcitations
- 2009Heavy ion implantation combined with grazing incidence X-ray absorption spectroscopy (GIXAS)
- 2009Trace element profiling of gunshot residues by PIXE and SEM-EDScitations
- 2009Characterization of junction activation and deactivation using non-equilibrium annealing
- 2008RBS/EBS/PIXE measurement of single-walled carbon nanotube modification by nitric acid purification treatmentcitations
- 2006Deactivation of B and BF2 profiles after non-melt laser annealing
- 2006Effect of buried Si SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junctioncitations
- 2006Deactivation of low energy boron implants into pre-amorphised Si after non-melt laser annealing with multiple scans
- 2006Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scanscitations
- 2005Evaluation of BBr2 + and B+ + Br + implants in silicon
- 2005Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJcitations
- 2005A potential integrated low temperature approach for superconducting MgB2 thin film growth and electronics device fabrication by ion implantationcitations
- 2005Comparison of elemental boron and boron halide implants into siliconcitations
- 2002Effect of implant conditions on the optical and structural properties of β-FeSi2
- 2001Microstructure of (100) silicon wafer implanted by 1 MeV Ru+ ionscitations
- 2001Electroluminescence of β-FeSi2 light emitting devices
- 2000Light-emitting diodes fabricated in silicon/iron disilicide
Places of action
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document
Effect of implant conditions on the optical and structural properties of β-FeSi2
Abstract
<p>Semiconducting precipitates of β-FeSi<sub>2</sub> have been successfully fabricated in silicon by high dose Fe<sup>+</sup> implantation (typically 1.5 × 10<sup>16</sup> Fe cm<sup>-2</sup> at 200keV). Room temperature electroluminescence (EL) at 1.5μm has been observed from light emitting diodes (LED's) incorporating this type of structure. This study is to evaluate how the microstructure and optical properties are affected by the implantation parameters, in particular the role of implantation temperature, when high beam current densities are being used. This was done in order to evaluate whether the implant period could be reduced to a commercially realistic time without adversely affecting the optical properties. In this study the implantation temperature was varied and the resulting structures investigated (before and after annealing) using optical absorption, Fourier Transform Infrared Spectroscopy (FTIR), Rutherford backscattering spectroscopy (RBS) and cross sectional transmission electron microscopy (XTEM). A 70 meV decrease in the optical band gap was observed between a sample implanted at 250°C and one implanted at 550°C, a shift in the FTIR spectrum was also observed. RBS and XTEM measurements showed that this change was associated with a change from a surface to a buried silicide layer, with the latter also exhibiting room temperature EL.</p>