| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kreupl, Franz
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2020Patterning Platinum by Selective Wet Etching of Sacrificial Pt-A1 Alloycitations
- 2019Graphenic carbon as etching mask: patterning with laser lithography and KOH etching
- 2019Highly Reliable Contacts to Silicon Enabled by Low Temperature Sputtered Graphenic Carbon
- 2018Carbon Wonderland from an Engineering Perspective
- 2017Graphenic Carbon: A Novel Material to Improve the Reliability of Metal-Silicon Contactscitations
- 2016Graphenic Carbon-Silicon Contacts for Reliability Improvement of Metal-Silicon Junctions
- 2016Graphenic carbon-silicon contacts for reliability improvement of metal-silicon junctionscitations
- 2015Trap passivation in memory cell with metal oxide switching element
- 2013TRAP PASSIVATION IN MEMORY CELL WITH METAL OXIDE SWITCHING ELEMENT
- 2013Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications—Part I: Process Developmentcitations
- 2012Integrated circuit including doped semiconductor line having conductive cladding
- 2011Integrated circuit including doped semiconductor line having conductive cladding
- 2010INTEGRATED CIRCUIT INCLUDING DOPED SEMICONDUCTOR LINE HAVING CONDUCTIVE CLADDING
- 2009Integrated circuit including doped semiconductor line having conductive cladding
- 2007Silicon to nickel‐silicide axial nanowire heterostructures for high performance electronicscitations
- 2004High-current nanotube transistorscitations
- 2004Catalytic CVD of SWCNTs at Low Temperatures and SWCNT Devices
- 2004Chemical Vapor Deposition Growth of Single-Walled Carbon Nanotubes at 600 °C and a Simple Growth Modelcitations
- 2003Contact improvement of carbon nanotubes via electroless nickel depositioncitations
- 2001Method for fabricating an integrated circuit having at least one metallization plane
- 2001Template grown multiwall carbon nanotubes
Places of action
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document
Graphenic carbon-silicon contacts for reliability improvement of metal-silicon junctions
Abstract
Contact resistance and thermal degradation of metal-silicon contacts are challenges in nanoscale CMOS as well as in power device applications. Titanium silicide (TiSi) contacts are commonly used metal-silicon contacts, but are known to diffuse into the active region under high current stress. In this paper we show that a graphenic carbon (C) contact deposited on n-type silicon (C-Si) by CVD, has the same low Schottky barrier height of 0.45 eV as TiSi, but a much improved reliability against high current stress. The C-Si contact is over 108 times more stable against high current stress pulses than the conventionally used TiSi junction. The C-Si contact properties even show promise to establish an ultra-low, high temperature stable contact resistance. The finding has important consequences for the enhancement of reliability in power devices as well as in Schottky-diodes and electrical contacts to silicon in general.