Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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977 Locations available

693.932 PEOPLE
693.932 People People

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (1/1 displayed)

  • 2013Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories434citations

Places of action

Chart of shared publication
Kalinin, S. V.
1 / 16 shared
Mikolajick, T.
1 / 19 shared
Polakowski, P.
1 / 3 shared
Boscke, T. S.
1 / 1 shared
Muller, S.
1 / 1 shared
Paul, J.
1 / 12 shared
Yurchuk, E.
1 / 1 shared
Riedel, S.
1 / 5 shared
Schenk, T.
1 / 16 shared
Arruda, T. M.
1 / 3 shared
Martin, D.
1 / 11 shared
Khullar, K.
1 / 1 shared
Kumar, Amit
1 / 23 shared
Seidel, K.
1 / 14 shared
Kersch, A.
1 / 2 shared
Weinreich, W.
1 / 10 shared
Boschke, R.
1 / 1 shared
Schroder, U.
1 / 1 shared
Bentum, R. Van
1 / 1 shared
Muller, J.
1 / 6 shared
Chart of publication period
2013

Co-Authors (by relevance)

  • Kalinin, S. V.
  • Mikolajick, T.
  • Polakowski, P.
  • Boscke, T. S.
  • Muller, S.
  • Paul, J.
  • Yurchuk, E.
  • Riedel, S.
  • Schenk, T.
  • Arruda, T. M.
  • Martin, D.
  • Khullar, K.
  • Kumar, Amit
  • Seidel, K.
  • Kersch, A.
  • Weinreich, W.
  • Boschke, R.
  • Schroder, U.
  • Bentum, R. Van
  • Muller, J.
OrganizationsLocationPeople

document

Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

  • Kalinin, S. V.
  • Mikolajick, T.
  • Polakowski, P.
  • Boscke, T. S.
  • Muller, S.
  • Paul, J.
  • Yurchuk, E.
  • Riedel, S.
  • Schenk, T.
  • Arruda, T. M.
  • Martin, D.
  • Khullar, K.
  • Kumar, Amit
  • Seidel, K.
  • Kersch, A.
  • Weinreich, W.
  • Boschke, R.
  • Schlosser, T.
  • Schroder, U.
  • Bentum, R. Van
  • Muller, J.
Abstract

With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM.

Topics
  • perovskite
  • thin film
  • field-effect transistor method
  • hafnium
  • hafnium oxide
  • magnetic force microscope