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| Naji, M. |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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Yvind, Kresten
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024InAs(P)/InP QDs as sources of single indistinguishable photons at 1.55 µm
- 2024Experimental realization of deep sub-wavelength confinement of light in a topology-optimized InP nanocavitycitations
- 2024Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bondingcitations
- 2019Systematically Varying the Active Material Volume in a Photonic Crystal Nanolaser
- 2019Systematically Varying the Active Material Volume in a Photonic Crystal Nanolaser
- 2019Doping technologies for InP membranes on silicon for nanolaserscitations
- 2019Doping technologies for InP membranes on silicon for nanolaserscitations
- 2018Ultra-Efficient and Broadband Nonlinear AlGaAs-on-Insulator Chip for Low-Power Optical Signal Processingcitations
- 2016An Ultra-Efficient Nonlinear Platform: AlGaAs-On-Insulator
- 2014All-Optical Signal Processing using Silicon Devicescitations
- 2013Ultrahigh-speed hybrid laser for silicon photonic integrated chips
- 2012Slow-light enhancement of spontaneous emission in active photonic crystal waveguides
- 2012Slow-light enhancement of spontaneous emission in active photonic crystal waveguides
- 2011Towards quantitative three-dimensional characterisation of InAs quantum dots
- 2011Active III-V Semiconductor Photonic Crystal Waveguidescitations
- 2010Enhanced amplified spontaneous emission in III-V semiconductor photonic crystal waveguides
- 2005Monolithic mode-locked lasers with deeply dry etched Bragg mirror
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document
Active III-V Semiconductor Photonic Crystal Waveguides
Abstract
We experimentally demonstrate enhanced amplified spontaneous emission in a quantum well III-V semiconductor photonic crystal waveguide slab. The effect is described by enhanced light matter interaction with the decrease of the group velocity. These are promising results for future compact devices for terabit/s communication, such as miniaturised semiconductor optical amplifiers and mode-locked lasers.