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Venkatachalam, D. K.
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Publications (5/5 displayed)
- 2014Effect of crystallization on the reliability of unipolar resistive-switching in HfO2-based dielectricscitations
- 2014The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbOx filmscitations
- 2012Resistive switching in high-k dielectrics for non-volatile memory applications
- 2010Bistable resistive switching in hafnium-silicate thin films
- 2010Size controlled growth of silica nanowires by thermal decomposition of thin gold films on siliconcitations
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document
Size controlled growth of silica nanowires by thermal decomposition of thin gold films on silicon
Abstract
<p>Control over nanowire growth is an important requirement for future nanotechnology devices because the physical structure and chemical properties of nanowires are critically affected by diameter, length, atomic composition, and nanowire density. Here, we report size controlled growth of silica nanowires by the formation of nanometer sized gold (Au) islands (catalyst particles) during thermal decomposition of Au thin films on silicon (Si).</p>