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Yarrison-Rice, J. M.
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Publications (7/7 displayed)
- 2011III-V compound semiconductor nanowires for optoelectronic device applicationscitations
- 2011Compound semiconductor nanowires for optoelectronic device applications
- 2011Growth and properties of III-V compound semiconductor heterostructure nanowirescitations
- 2009III-V compound semiconductor nanowires
- 2009III-V compound semiconductor nanowirescitations
- 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
- 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
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document
Compound semiconductor nanowires for optoelectronic device applications
Abstract
We review GaAs and InP nanowires and GaAs based nanowire heterostructures grown on (111)B substrates by metal organic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. Transmission electron microscopy, time-resolved photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, carrier lifetime and strain effects on the bandgap energy.