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Jong, Maurits J. De
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Anomalous Scaling of Parasitic Capacitance in FETs with a High-K Channel Material
Abstract
<p>We investigate the operation of FETs with a high-K channel material, SrTiO<sub>3</sub>, (K=300). The transistors show low-leakage, high-capacitance operation with a sub-nm equivalent oxide thickness, in line with expectations. In depletion however, the gate-source capacitance appears to have an unusual 1/3power dependence on the device length and width. This awkward scaling behaviour is analyzed in detail in this paper and possible consequences for SrTiO<sub>3</sub> devices and related 2D-material transistors are discussed. It is argued to relate to the high-permittivity channel. This high permittivity is further experimentally shown to result in strong short-channel effects in 10-μ {m} -long FETs, in spite of the highly scaled equivalent oxide thickness, when the operation temperature is lowered to 4.2 K.</p>